Study of the set statistical characteristics in the Cu/HfO2/Pt-based RRAM device

Author

Meiyun Zhang ; Shibing Long ; Guoming Wang ; Yang Li ; Xiaoxin Xu ; Hongtao Liu ; Ming Wang ; Pengxiao Sun ; Haitao Sun ; Qi Liu ; Hangbing Lv ; Ming Liu

Author_Institution

Lab. of Nanofabrication & Novel Device Integration, Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The variation of resistive switching (RS) parameters is one of the major challenges to push resistive random access memory (RRAM) into application. In this paper, with a statistical methodology, for the first time we study the statistical distributions of set parameters of the Cu/HfO₂/Pt based conductive bridge random access memory (CBRAM). The distributions of the set parameters in each off resistance range are shown to nicely fit a Weibull model. The Weibull slope and scale factor of the set voltage increase logarithmically with the geometric mean of off resistance in different ranges, which can be well explained by the cell-based percolation model of set statistics. And also for the first time, we revel that the Weibull slope of the set current decreases logarithmically with the off resistance. Our study is of significance to reduce the fluctuation of the resistive switching parameters.

Keywords

copper; hafnium compounds; platinum; resistive RAM; statistical analysis; CBRAM; Cu-HfO₂-Pt; RRAM device; RS parameters; Weibull slope; cell-based percolation model; conductive bridge random access memory; geometric mean; off resistance; resistive random access memory; resistive switching parameters; scale factor; set statistical characteristics; Abstracts; Hafnium compounds; Irrigation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021264

Filename

7021264