A novel PNPN bipolar selector for RRAM array application

We herein present an asymmetric I-V characteristics PNPN selector for bipolar resistive switching (RS) memory crossbar array application. Negative curve of the PNPN selector with high current density was demonstrated, which is analogous to threshold switching (TS). Moreover, latch-up voltage is designable by tuning the p/n-region doping and length. On the other hand, the positive behavior is designed to nonlinear curve by barrier lowering mechanism. The conceptual framework to suppress the sneak-current was demonstrated by integrating a bipolar RS memory element with the PNPN selector, indicating that the PNPN selector has good potential for future high-density cross-point application.