Channel-substrate current and breakdown characteristics in GaAs MESFETs with varied MBE buffer thickness

Author

Gao, Frank ; Chanana, Ravi ; Nicholls, Tom

Author_Institution

Semicond. Reliability, Alpha Industries Inc., Haverhill, MA, USA

fYear

2001

fDate

2001

Firstpage

97

Lastpage

118

Abstract

This paper presents a careful and detailed study of the electrical and reliability characterizations on MBE-grown GaAs MMIC MESFETs with an undoped GaAs buffer layer of thickness of 300 and 500 nm upon the semi-insulating (SI) GaAs substrate. The test vehicle was a discrete MESFET transistor from the RFPCM. It is a two-gate-finger recessed-gate MESFET with a gate length of 0.8 μm and a total width of 460 μm (230 μm each finger). The gate materials are Ti/Pd/Au, and the n-channel has a thickness of ∼1/4 μm with a carrier concentration of ∼10⁷/cm³.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor device reliability; 0.8 micron; GaAs; GaAs MESFET; MBE GaAs buffer layer; breakdown characteristics; channel substrate current; electrical reliability; semi-insulating GaAs substrate; Breakdown voltage; Buffer layers; Electric breakdown; FETs; Gallium arsenide; Leakage current; MESFETs; Stress; Substrates; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2001. Proceedings

Print_ISBN

0-7908-0066-7

Type

conf

DOI

10.1109/GAASRW.2001.995737

Filename

995737