Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration

Author

Fresina, Mike ; Logue, Mike ; Fendrich, John ; Rogers, Tom

Author_Institution

RF Micro Devices, Greensboro, NC, USA

fYear

2001

fDate

2001

Firstpage

203

Lastpage

222

Abstract

The reliability of MBE-grown AlGaAs/GaAs HBT technology has been well documented and the process has consistently demonstrated MTTF(125) > 1E8 hours and E_A ≈1.7 eV. We have now released our next generation HBT technology (HBT-3G). Several changes were made to the original production HBT structure (HBT2UM) to improve the HBT performance for HBT-3G. Most significant of these changes were an increase in the Be concentration in the base by 50% and an increase in the aluminum concentration in the emitter from 26% to 33%. Three-temperature accelerated life testing has been completed on this new device structure and shows the HBT-3G device to be as reliable as the HBT2UM technology.

Keywords

III-V semiconductors; aluminium compounds; beryllium; failure analysis; gallium arsenide; heterojunction bipolar transistors; life testing; molecular beam epitaxial growth; semiconductor device reliability; semiconductor doping; AlGaAs-GaAs:Be; AlGaAs/GaAs HBT; HBT-3G device; HBT2UM technology; MBE growth; MTTF; activation energy; aluminum concentration; beryllium doping; reliability; three-temperature accelerated life testing; Aluminum; Doping; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Life testing; Power amplifiers; Production; Radio frequency; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2001. Proceedings

Print_ISBN

0-7908-0066-7

Type

conf

DOI

10.1109/GAASRW.2001.995748

Filename

995748