Title :
Photovoltaic properties of ZnO/p-Si heterostructure with graphene transparent electrodes
Author :
Yilin Sun ; Dan Xie ; Jianlong Xu ; Gang Li ; Cheng Zhang ; Xiaowen Zhang ; Yuanfan Zhao ; Tingting Feng ; Tianling Ren
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol-ogy (TNList), Tsinghua Univ., Beijing, China
Abstract :
We report the photovoltaic properties of ZnO/p-Si heterostructure with graphene as transparent electrodes. The graphene films with good transparency and conductivity were transferred to the substrate as the transparent conductive electrode (TCE) after deposition of 30 nm thick ZnO film on p-Si wafers by a simple sol-gel method. The graphene/ZnO/p-Si heterostructure exhibits good light sensitivity to both sunlight and UV light, demonstrating the feasibility of graphene used as TCE in ZnO based optoelectronic devices.
Keywords :
II-VI semiconductors; elemental semiconductors; graphene; p-n heterojunctions; photoconductivity; photovoltaic effects; semiconductor thin films; semiconductor-insulator boundaries; silicon; sol-gel processing; wide band gap semiconductors; zinc compounds; C-ZnO-Si; Si; UV light; ZnO based optoelectronic devices; graphene films; graphene transparent conductive electrode; graphene-ZnO-p-Si heterostructure; light sensitivity; p-Si wafers; photovoltaic properties; size 30 nm; sol-gel method; sunlight; Abstracts; Graphene; Integrated optics; Photovoltaic systems; X-ray scattering; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021275
