Title :
Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective
Author :
Martino, Joao Antonio ; Agopian, Paula G. D. ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper will discuss the analog behavior of the main insulated gate field effect transistor (FET) roadmap, like Silicon-On-Insulator (SOI) MOSFET, Graded-Channel (GC) SOI MOSFET, triple-gate SOI FinFET and Tunnel-FET (TFET) devices. The main analog Figures of Merit (FoM) like transconductance over drain current ratio, Early voltage, intrinsic voltage gain and unit gain frequency will be analyzed.
Keywords :
MOSFET; silicon-on-insulator; tunnel transistors; TFET devices; analog figures of merit; analog performance perspective; drain current ratio; early voltage; graded-channel SOI MOSFET; insulated gate field effect transistor; intrinsic voltage gain; silicon-on-insulator; transconductance; triple-gate SOI FinFET; tunnel-FET devices; unit gain frequency; Abstracts; Logic gates; MOSFET; Performance evaluation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021276
