Hybrid mode analysis of RF characteristics in integrated optical modulations on III-V semiconductors

Author

Wu, K. ; Tong, C.E. ; Vahldieck, R.

Author_Institution

Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada

fYear

1990

fDate

8-10 May 1990

Firstpage

289

Abstract

The method of lines was used to study the RF/microwave characteristics of III-V semiconductor traveling-wave electrooptic modulators. Double-rib, multilayer strip waveguides were investigated. It was found that Schottky barrier junction controlled structures support multinondispersive modes having phase velocities that closely match the optical carrier. These modes are potentially useful in ultrafast modulators operating into the millimeter-wave band.<>

Keywords

III-V semiconductors; integrated optoelectronics; modulators; solid-state microwave devices; EHF; III-V semiconductors; RF characteristics; Schottky barrier junction controlled structures; hybrid mode analysis; integrated optical modulations; millimeter-wave band; multilayer strip waveguides; multinondispersive modes; phase velocities; traveling-wave electrooptic modulators; ultrafast modulators; Electrooptic modulators; III-V semiconductor materials; Integrated optics; Microwave theory and techniques; Nonhomogeneous media; Optical modulation; Optical waveguides; Radio frequency; Strips; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99576

Filename

99576