Title :
Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability
Author :
Xingsheng Wang ; Binjie Cheng ; Millar, C. ; Reid, Dave ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
Variability in nanoscale FinFETs brings huge challenges to SRAM design. Using recently developed unified variability compact models, in this paper we investigate the impact of long-range process variation and local statistical variability on various 6T-SRAM metrics including static noise margin, bitline write margin and retention leakage in two types of cell layout. The results show that these metrics are affected by different types of variability with different sensitivities.
Keywords :
MOSFET; SRAM chips; statistical analysis; 6T-SRAM metrics; FinFET; bitline write margin; long-range process variation; retention leakage; static noise margin; statistical variability; unified variability compact model; FinFETs; Integrated circuit modeling; Layout; Measurement; Random access memory; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021284
