Title :
Impact of BTI on random logic circuit critical timing
Author :
Cheung, K.P. ; Lu, J.W. ; Jiao, G.F. ; Vaz, C. ; Campbell, J.P. ; Ryan, J.T.
Author_Institution :
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
Abstract :
Using a newly developed single transistor eye-diagram method, we examined the effect of BTI stress on logic circuit critical timing under a realistic bit pattern (pseudo random). We demonstrated that the recoverable part of the BTI degradation produce significant timing skew that is random in nature. This random timing skew is in addition to the systematic timing degradation captured in measurements using ring oscillator circuits. The size of this random skew is very large and can be a serious problem for logic circuit under tight timing budget. This effect has not been known before and therefore not accounted for in any of the proposed circuit methodology to mitigate BTI effects.
Keywords :
logic circuits; oscillators; rings (structures); timing circuits; transistors; BTl degradation; BTl effect mitigation; BTl stress; bias temperature instability; bit pattern; pseudo random; random logic circuit critical timing skew; ring oscillator circuit methodology; single transistor eye-diagram method; systematic timing degradation; Capacitance; Generators; Probes; Radio frequency; Stress; Stress measurement; Time measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021286