Title :
Modeling of aging effect for advanced MOSFETs
Author :
Ma, Chengbin ; Mattausch, Hans Jurgen ; Matsuzawa, K. ; Yamaguchi, Satarou ; Hoshida, Takeshi ; Imade, M. ; Koh, R. ; Arakawa, Takeshi ; Miura-Mattausch, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
This paper proposes dynamic and long-term negative bias temperature instability (NBTI) model for predicting circuit degradation. The real-time dynamic simulation is carried out by implementing the NBTI model into the compact MOSFET model HiSIM. Since this simulation approach is time consuming, a long-term model is developed, which enables to predict the device degradation after 10 years´ usage. The aged device characteristics are able to be directly calculated from determined operation time, frequency and duty cycle.
Keywords :
MOSFET; ageing; negative bias temperature instability; semiconductor device models; semiconductor device reliability; advanced MOSFET; aging effect; circuit degradation; dynamic NBTI; long term NBTI; negative bias temperature instability NBTI; real time dynamic simulation; Abstracts; Aging; Computational modeling; IP networks; Integrated circuit modeling; SPICE; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021287
