3D TCAD simulation of single-event-effect in n-channel transistor based on deep sub-micron fully-depleted silicon-on-insulator technology

3D fully-depleted silicon-on-insulator (FDSOI) n-channel transistor model is constructed by the accurate calibration between process information from OKI and Synopsys TCAD tool. Single-event-effect (SEE) simulations are conducted based on the 3D model to evaluate the collected charge from different heavy ion strike locations. The channel is the most SEE sensitive region along channel length direction in terms of the collected charge. The TCAD simulations of the collected charge along channel width direction are constrained by the boundary condition. This paper provides the guide for the SEE hardening improvement of the FDSOI process and device structure.