Key factors affecting trigger voltage of SCRS for ESD protection

Author

Hailian Liang ; Long Huang ; Xiaofeng Gu ; Huafeng Cao ; Shurong Dong ; Liou, Juin J.

Author_Institution

Dept. of Electron. Eng., Jiangnan Univ., Wuxi, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

A lateral silicon-controlled rectifier (SCR), a modified vertical SCR and a modified lateral SCR with the same device width are fabricated in a 0.25-μm Bipolar-CMOS-DMOS high-voltage process. Key factors affecting the trigger voltage of SCRs are investigated by simulation and transmission line pulse tests. The simulation results show that the trigger voltage depends on the doping concentration, the space charge width and the vertical depth of the breakdown junction. The experimental results indicate that the trigger voltage can be decreased from 40 V to 15 V when the space charge width and the vertical depth of breakdown junction decrease appropriately.

Keywords

CMOS integrated circuits; bipolar integrated circuits; electrostatic discharge; integrated circuit testing; semiconductor doping; space charge; thyristors; trigger circuits; ESD protection; bipolar-CMOS-DMOS high-voltage process; breakdown junction; doping concentration; electrostatic discharge; modified lateral SCR; modified vertical SCR; silicon-controlled rectifier; size 0.25 mum; space charge width; transmission line pulse testing; trigger voltage; voltage 40 V to 15 V; Abstracts; Electrostatic discharges; Junctions; Phase change materials; Physics; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021290

Filename

7021290