An efficient test structure for interface trap characterization under BTI stresses

An efficient test structure for interface trap density characterization has been proposed. Based on this single structure and one-time IV measurement, the interface trap densities on both n- and p-type Si/SiO₂ interfaces are obtained, achieving 1x efficiency improvement and 50% cost reduction. BTI-stress-induced degradation was studied and compared under the same structure, demonstrating a better test efficiency and resolution to interface traps generation at different Si/SiO₂ interfaces.