Gigahertz low noise CMOS transimpedance amplifier

Author

Park, S.-M. ; Toumazou, C.

Author_Institution

Dept. of Electron. & Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

1

fYear

1997

fDate

9-12 Jun 1997

Firstpage

209

Abstract

A new class of low noise CMOS common gate transimpedance amplifier is described. What is novel about the design is the total isolation of the photodiode capacitance from determining the -3 dB bandwidth. HSPICE simulations of this amplifier were conducted using the Tritech 0.6 μm CMOS process. Simulated performance gives 2 GHz bandwidth, 1.13 kΩ transimpedance gain and very low input noise current. In addition, a regulated cascoded transimpedance amplifier is also presented. The low input impedance characteristic is exploited to get wide bandwidth. Simulation gives 4 GHz bandwidth, 47 dB gain and low input noise current, particularly at high frequencies

Keywords

CMOS analogue integrated circuits; SPICE; circuit analysis computing; integrated circuit design; integrated circuit noise; optical receivers; preamplifiers; 0.6 micron; 2 GHz; 4 GHz; 47 dB; CMOS transimpedance amplifier; HSPICE simulations; Tritech CMOS process; common gate; input impedance; input noise current; isolation; photodiode capacitance; regulated cascoded transimpedance amplifier; transimpedance gain; Bandwidth; Circuit noise; Equivalent circuits; Low-noise amplifiers; Optical amplifiers; Optical noise; Optical receivers; PIN photodiodes; Radiofrequency amplifiers; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.608671

Filename

608671