Title :
ESA deep space cryogenic LNAs Past, present and future
Author_Institution :
Eur. Space Oper. Center, Eur. Space Agency (ESA), Darmstadt, Germany
Abstract :
This paper details the design of the first generation of cryogenic low noise amplifier which has been used by ESA since 2000 for the support of deep space missions. Then we describe the performances improvements introduced with the second generation of LNA. The second generation of LNA has been developed through ESA Technology Research Program and the production units will be deployed in ESA deep space antenna in 2011.ESA will start the development of Indium Arsenide HEMT transistor in order to lower thermal noise at Ka band. It is planned as well to develop a cryogenic feed at Ka band in order to reduce the insertion loss of the deep space front end.
Keywords :
III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; low noise amplifiers; microwave amplifiers; microwave antennas; millimetre wave amplifiers; millimetre wave antennas; thermal noise; ESA Technology Research Program; ESA deep space antenna; InAs; Ka band; cryogenic feed; deep space cryogenic LNA; deep space missions; indium arsenide HEMT transistor; low noise amplifier; production units; thermal noise; Antennas; Cryogenics; HEMTs; Low-noise amplifiers; Noise; Receivers; Space missions; Cryogenic; Gallium Arsenide; Indium Arsenide; Indium Phosphide; Low Noise Amplifier;
Conference_Titel :
Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on
Conference_Location :
Potsdam
Print_ISBN :
978-1-4673-4454-8
Electronic_ISBN :
2161-0819
DOI :
10.1109/ISSSE.2012.6374307