Title :
Towards solid-state realization of THz signal generation
Author :
Zhiping Yu ; Jinyu Zhang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The state-of-the-art in solid-state generation of radio frequency ranging from 300 GHz to 3 THz (named as THz signal in this article) is reviewed. Three types of signal sources are covered: oscillators in conventional ICs made of CMOS, SiGe-HBTs, and III-V HEMTs; photo-mixing (also called optical heterodyning); and use of channel plasma-wave instability in 2DEG (2-dimensional electron gas) devices. All those electronic generations can also be categorized as transit-time limited or not. We will describe in some more details the operation principles and mathematical formulation for the plasma-wave generated THz emission. Finally, the exploration of new nanomaterials such as graphene for the purpose of THz generation is mentioned.
Keywords :
CMOS analogue integrated circuits; Ge-Si alloys; III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; plasma instability; semiconductor materials; signal sources; submillimetre wave generation; submillimetre wave integrated circuits; submillimetre wave oscillators; terahertz wave generation; two-dimensional electron gas; 2-dimensional electron gas devices; 2DEG devices; CMOS process; HBTs; ICs; III-V HEMTs; SiGe; THz signal generation; channel plasma-wave instability; electronic generations; frequency 300 GHz to 3 THz; mathematical formulation; nanomaterials; optical heterodyning; oscillators; photo-mixing; plasma-wave generated THz emission; signal sources; solid-state realization; CMOS integrated circuits; CMOS technology; HEMTs; Integrated optics; MODFETs; Optical mixing; Oscillators;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021308
