Title :
A K-band injection-locked frequency tripler with injection-enhancement in 130-nm CMOS
Author :
Wei Wang ; Wei Li ; Ning Li ; Junyan Ren
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
K-band injection locked frequency tripler (ILFT) is proposed, analyzed, and implemented using 130-nm CMOS process. In the proposed ILFT, the injection enhancement technique can increase the injection ratio leading to a larger locking range. The simulation results show that the locking range reaches 2.1 GHz at 22.5 GHz center frequency with a 2-dBm input power. The proposed ILFT consumes 6.8 mW from 1 V supply voltage.
Keywords :
CMOS integrated circuits; UHF integrated circuits; frequency multipliers; microwave integrated circuits; CMOS process; ILFT; K-band injection-locked frequency tripler; center frequency; frequency 2.1 GHz to 22.5 GHz; injection ratio enhancement technique; locking range; power 6.8 mW; size 130 nm; voltage 1 V; Abstracts; CMOS integrated circuits; CMOS technology; Frequency control; Generators; K-band; Lead;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021310
