• DocumentCode
    241781
  • Title

    POD-based thermal model for FinFET IC structure

  • Author

    Cheng, Ming-C ; Wangkun Jia ; Helenbrook, Brian T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A reduced basis element method is presented based on proper orthogonal decomposition (POD) to develop thermal models for FinFET devices and integrated circuits. The POD approach is able to substantially reduce numerical degrees of freedom (DOF) while offering spatial thermal solution as detailed as detailed numerical simulation. The POD thermal models for the selected FinFET blocks can be stored in a library for constructing a larger circuit structure. This study demonstrates that, using the developed approach, an accurate thermal model for a multi-block FinFET structure can be developed to capture all the hot spots in the structure with a reduction in DOFs by nearly 6 orders of magnitude, compared to DNS.
  • Keywords
    MOSFET circuits; integrated circuit modelling; numerical analysis; FinFET devices; degrees of freedom; integrated circuits; numerical simulation; proper orthogonal decomposition; thermal model; Abstracts; Integrated circuit modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021313
  • Filename
    7021313