Title :
Switching performances of high power fast recovery rectifiers
Author :
Bisio, G.R. ; Icardi, M. ; Dizitti, E. ; Portesine, M. ; Tenconi, S.
Author_Institution :
Istituto per i Circuiti Elettronici, C.N.R., Istituto di Elettrotecnia; Centro Sviluppo e Produzione Semiconducttor-Ansaldo, Italy
fDate :
June 29 1981-July 3 1981
Abstract :
The switching performances of Au-Pt-diffused and gamma-irradiated p+-n-n+ diodes are considered with OCVD measurements, at high and low level of injection, in the temperature range of 300 K - 425 K. The dependence of reverse recovery time and snappines fromc arrier lifetimes injection efficiency, width and resistivity of the base is analyzed experimentally and theoretically.
Keywords :
Conductivity; Current measurement; Fabrication; Junctions; Switches; Temperature measurement;
Conference_Titel :
Power Electronics Specialists Conference, 1981 IEEE
Conference_Location :
Boulder, Colorado, USA
DOI :
10.1109/PESC.1981.7083645
