DocumentCode
2417852
Title
Switching performances of high power fast recovery rectifiers
Author
Bisio, G.R. ; Icardi, M. ; Dizitti, E. ; Portesine, M. ; Tenconi, S.
Author_Institution
Istituto per i Circuiti Elettronici, C.N.R., Istituto di Elettrotecnia; Centro Sviluppo e Produzione Semiconducttor-Ansaldo, Italy
fYear
1981
fDate
June 29 1981-July 3 1981
Firstpage
244
Lastpage
251
Abstract
The switching performances of Au-Pt-diffused and gamma-irradiated p+-n-n+ diodes are considered with OCVD measurements, at high and low level of injection, in the temperature range of 300 K - 425 K. The dependence of reverse recovery time and snappines fromc arrier lifetimes injection efficiency, width and resistivity of the base is analyzed experimentally and theoretically.
Keywords
Conductivity; Current measurement; Fabrication; Junctions; Switches; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1981 IEEE
Conference_Location
Boulder, Colorado, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1981.7083645
Filename
7083645
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