Title :
Application of transistor emitter-open turn-off scheme to high voltage power inverters
Author :
Chen, Dan Y. ; Walden, John P.
Author_Institution :
Department of Electrical Engineering Virginia Polytechnic Institute, Blacksbburg, VA
fDate :
June 29 1981-July 3 1981
Abstract :
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.
Keywords :
Breakdown voltage; Electric breakdown; Inverters; Low voltage; Power transistors; Transistors; Windings;
Conference_Titel :
Power Electronics Specialists Conference, 1981 IEEE
Conference_Location :
Boulder, Colorado, USA
DOI :
10.1109/PESC.1981.7083646
