Computer-aided analysis and optimization of subhalf-micron-gate MODFET structures

Author

Shawki, T. ; Salmer, G.

Author_Institution

Centre Hyperfrequences et Semiconducteurs, Univ. de Sci. et Tech. de Lille-Flandres-Artois, Villenueve de´´Ascq, France

fYear

1990

fDate

8-10 May 1990

Firstpage

319

Abstract

Novel optimization techniques for sub-half micron gate MODFET structures are thoroughly investigated based on accurate 2-D hydrodynamic hot-electron modeling. Some novel device design concepts to be implemented in submicron-MODFET knowledge-based systems are emphasized. Device design constraints and guidelines for achieving optimum millimeter-wave performance are considered. These cover gate-length miniaturization, optimal gate-recess dimensions, and optimized single-quantum-well MODFET geometries.<>

Keywords

electronic engineering computing; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; 2-D hydrodynamic hot-electron modeling; gate-length miniaturization; knowledge-based systems; millimeter-wave performance; optimal gate-recess dimensions; optimization techniques; optimized single-quantum-well MODFET geometries; subhalf-micron-gate MODFET structures; Circuit simulation; Computer aided analysis; Electrons; Frequency; Geometry; Guidelines; HEMTs; MODFET circuits; Microwave devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99584

Filename

99584