Interface engineering for high-performance top-gated MoS2 field effect transistors

In recent years, due to the intriguing electrical and optical characteristics, two dimensional layered transition metal dichalcogenides such as MoS₂ have attracted tremendous research attention. In a distinct contrast to the bandgap issue of graphene, MoS₂ is semiconducting with a satisfied thickness-dependent bandgap of 1.2 to 1.8 eV, which can enable lots of fascinating device applications. However, until now, majority of the efforts have been focused on the integration of MoS₂ devices in the back- or dual-gated geometry due to the difficulty of compact and conformal top-gated dielectric deposition directly onto the 2-D channel for the realization of high-performance top-gated FETs. In this regard, interface or dielectric engineering is an important step towards the practical implementation of MoS₂ devices with the optimized performance.