DocumentCode :
2418051
Title :
A nonlinear distributed FET-model, for millimeter-wave circuit design by harmonic balance techniques
Author :
Ongareau, E. ; Aubourg, M. ; Gayral, M. ; Obregon, J.
Author_Institution :
Ecole Polytech., Montreal Univ., Que., Canada
fYear :
1990
fDate :
8-10 May 1990
Firstpage :
323
Abstract :
A systematic procedure is proposed for deriving a nonlinear, distributed FET model that can be implemented in harmonic balance simulators for nonlinear design at millimeter waves. The model is derived from the knowledge of the conventional lumped nonlinear equivalent circuit and the geometrical dimensions of the FET. A FET-finger is modeled by N sliced sections. Each section includes a nonlinear two-port, inserted between two linear four-ports. Element values of the nonlinear two-port are derived from the lumped model by appropriate scaling rules. Element values of the linear four-port are derived from an electromagnetic analysis of the transverse structure of the FET, taking into account coupling and distributed effects along the electrodes. The model is applied to the nonlinear analysis of a millimeter-wave FET.<>
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave circuits; FET-finger; distributed effects; electromagnetic analysis; geometrical dimensions; harmonic balance techniques; linear four-ports; lumped model; lumped nonlinear equivalent circuit; millimeter-wave circuit design; nonlinear distributed FET-model; scaling rules; Capacitance; Circuit simulation; Coupling circuits; Electromagnetic analysis; Equivalent circuits; FETs; Frequency; Millimeter wave circuits; Millimeter wave technology; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
Type :
conf
DOI :
10.1109/MWSYM.1990.99585
Filename :
99585
Link To Document :
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