Title :
Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes
Author :
Lin Qi ; Nanver, Lis K.
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.
Keywords :
avalanche diodes; boron; p-n junctions; B; PureB-only light-entrance windows; SPAD; VUV sensitive avalanche diodes; pure boron technology; single-photon avalanche diodes; vacuum-ultraviolet light; wavelength 10 nm to 400 nm; Abstracts; Artificial intelligence; Cathodes; Hafnium; Rough surfaces; Surface roughness; Thickness measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021330
