Downscaled graphene nanodevices: Helium ion beam based nanofabrication, graphene single-carrier transistors (GSCTs) and nano-electro-mechanical (GNEM) switches

In this paper we first present a new hybrid fabrication process of downscaled graphene nanodevices based on direct ultrafine milling process by using atomic-size helium ion beam and the electron beam lithography process. We then describe the bilayer graphene single carrier transistors (GSCTs) and their Coulomb oscillation characteristics at 1.7 K. Unique double current peak structures were observed in the Coulomb oscillation which are attributable to single carrier tunneling via vertically stacked double charging islands. Finally we demonstrate a mechanically stable graphene nano-electro-mechanical (GNEM) switch fabricated using a simple etching-free method with polymer sacrificial spacer. Switch-ON and OFF operations are achieved in a reversible manner.