Low temperature study of GaAs MOSFETs with atomic layer epitaxial La2O3

Author

Sichao Li ; Lin Dong ; Xuefei Li ; Peide Ye ; Yanqing Wu

Author_Institution

Wuhan Nat. High Magn. Field Center, Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The interface between III-V and gate dielectrics is a key challenge in developing high performance III-V MOSFETs such as GaAs and InGaAs. The high density of interface states (D_it) makes it very difficult to modulate surface Fermi level and inversion carrier concentration. By growing an epitaxial layer (ALE) of La₂O₃ dielectric on GaAs(111)A, D_it can be effectively reduced and Fermi levels movement efficiency is greatly improved. In this paper, we studied systematically the carrier transport including IV, CV and conductance method at temperatures ranging from 300 K to low temperatures down to 4.3 K.

Keywords

Fermi level; III-V semiconductors; MOSFET; atomic layer epitaxial growth; carrier density; gallium arsenide; high-k dielectric thin films; indium compounds; lanthanum compounds; ALE; III-V MOSFET; InGaAs; La₂O₃; atomic layer epitaxial; carrier concentration; carrier transport; gate dielectrics; surface Fermi level; temperature 300 K to 4.3 K; Abstracts; Atomic layer deposition; Atomic measurements; Logic gates; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021337

Filename

7021337