Title :
Low temperature study of GaAs MOSFETs with atomic layer epitaxial La2O3
Author :
Sichao Li ; Lin Dong ; Xuefei Li ; Peide Ye ; Yanqing Wu
Author_Institution :
Wuhan Nat. High Magn. Field Center, Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
The interface between III-V and gate dielectrics is a key challenge in developing high performance III-V MOSFETs such as GaAs and InGaAs. The high density of interface states (Dit) makes it very difficult to modulate surface Fermi level and inversion carrier concentration. By growing an epitaxial layer (ALE) of La2O3 dielectric on GaAs(111)A, Dit can be effectively reduced and Fermi levels movement efficiency is greatly improved. In this paper, we studied systematically the carrier transport including IV, CV and conductance method at temperatures ranging from 300 K to low temperatures down to 4.3 K.
Keywords :
Fermi level; III-V semiconductors; MOSFET; atomic layer epitaxial growth; carrier density; gallium arsenide; high-k dielectric thin films; indium compounds; lanthanum compounds; ALE; III-V MOSFET; InGaAs; La2O3; atomic layer epitaxial; carrier concentration; carrier transport; gate dielectrics; surface Fermi level; temperature 300 K to 4.3 K; Abstracts; Atomic layer deposition; Atomic measurements; Logic gates; MOSFET circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021337
