Title :
A comparative study of Ge MOSFET using Al2O3/GeOx/Ge stacks-forming high quality GeOx interface layer to boost device performance
Author :
Xu Yang ; Sheng-Kai Wang ; Bing Sun ; Wei Zhao ; Hu-Dong Chang ; Zhen-Hua Zeng ; Xiong Zhang ; Yi-Ping Cui ; Hong-Gang Liu
Author_Institution :
Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China
Abstract :
Ge is a promising candidate to replace Si for advanced metal-oxide-semiconductor field effect transistors (MOSFETs) because of its high mobility. Reducing interface trap density (Dit) and forming high quality high-k/Ge gate stacks are required for high-performance Ge-MOSFET. The GeO2 interfacial layer (IL) between high-k and Ge is considered as one of the best solutions to improve the interface quality. Therefore, in this study, various passivation ways including thermal oxidation, ozone oxidation and modified ozone oxidation were investigated. The impacts of three oxygen-related passivation methods on interface modification, gate leakage suppression, and dielectric enhancement were discussed.
Keywords :
MOSFET; aluminium compounds; dielectric devices; germanium compounds; interface states; oxidation; ozone; passivation; semiconductor device manufacture; Al2O3-GeOx-Ge; GeO2; MOSFET; O3; dielectric enhancement; gate leakage suppression; gate stacks; interface modification; interface trap density; interfacial layer; metal-oxide-semiconductor field effect transistors; oxygen-related passivation methods; ozone oxidation; thermal oxidation; Abstracts; Atomic layer deposition; Dielectrics; Gases; Oxidation; Substrates; Three-dimensional displays;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021338
