Title :
A design of defense circuits of high-frequency thyristored inverters
Author :
Uan-Zo-Li, A.B. ; Chuev, V.I. ; Volsky, S.I.
Author_Institution :
Exp. Design Bur., Moscow Aviation Inst., Russia
Abstract :
It has been shown that only the use of defense circuits allows application of power thyristors in high-frequency high-voltage inverters. A detailed computer simulation of a defense circuit of a resonant inverter with anti-parallel diodes and open input was demonstrated. Also, the paper gives simple instructions for the design of the defense circuits.
Keywords :
circuit analysis computing; digital simulation; invertors; losses; power semiconductor diodes; resonant power convertors; switching circuits; thyristor convertors; anti-parallel diodes; computer simulation; defense circuits; high-frequency thyristored inverters; high-voltage inverters; open input; power semiconductor devices switching; power thyristors; resonant inverter; supplementary losses; total losses;
Conference_Titel :
Power Electronics and Variable Speed Drives, 1996. Sixth International Conference on (Conf. Publ. No. 429)
Print_ISBN :
0-85296-665-2
DOI :
10.1049/cp:19960937
