Title :
A simple empirical noise model of submicron-gate GaAs MESFET for CAD applications
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A simple empirical noise model of GaAs MESFETs with submicron gate is presented. From noise parameter measurements on various types of GaAs MESFETs, the intrinsic noise current sources have been found to be represented in simple empirical equations. Hence, the noise parameters can be determined only from the small-signal equivalent circuit, and good agreement is obtained between the model and measurements. The model does not require additional noise measurement and is suitable especially for microwave CAD applications.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; electron device noise; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; CAD applications; GaAs; MESFET; empirical equations; empirical noise model; intrinsic noise current sources; microwave CAD; noise parameter measurements; small-signal equivalent circuit; submicron gate; Circuit noise; Equivalent circuits; Frequency; Gallium arsenide; Integrated circuit noise; MESFETs; Microwave integrated circuits; Noise figure; Noise measurement; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99590
