Title :
High power density IGBT module for high reliability applications
Author :
Chamund, D.J. ; Coulbeck, L. ; Newcombe, D.R. ; Waind, P.R.
Author_Institution :
Dynex Semicond., Lincoln, UK
Abstract :
The blocking voltage rating of an IGBT module have reached up to 6.5 kV, however for true high power application such as traction drives, the current rating has to increase as well. This is mainly achieved by either improving the packing density of semiconductor chips per given module footprint and or improving the current density of the semiconductor chips used in the IGBT module. In this paper we explore how the current ratings of an 800 A, 3.3 kV module with 140times130 mm footprint can be improved for a fixed base-line reliability.
Keywords :
insulated gate bipolar transistors; semiconductor device packaging; semiconductor device reliability; blocking voltage rating; current 800 A; fixed base-line reliability; high-power density IGBT module; high-reliability application; insulated gate bipolar transistor; packing density; semiconductor chip; voltage 3.3 kV; Bonding; Current density; Failure analysis; Insulated gate bipolar transistors; Life estimation; Maintenance; Modular construction; Soldering; Temperature; Voltage; Fast recovery diode; IGBT; life estimation; reliability;
Conference_Titel :
Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-3556-2
Electronic_ISBN :
978-1-4244-3557-9
DOI :
10.1109/IPEMC.2009.5157398
