Title :
Statistical analysis of four write stability metrics in fully depleted silicon-on-thin-BOX (SOTB) and bulk SRAM cells at low supply voltage
Author :
Hao Qiu ; Mizutani, Tomoko ; Yamamoto, Yusaku ; Makiyama, Hideki ; Yamashita, Takayoshi ; Oda, Hidekazu ; Kamohara, Shiro ; Sugii, Nobuyuki ; Saraya, Takuya ; Kobayashi, Masato ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
Statistical distributions of four write stability metrics at low supply voltage (VDD) were measured in 1k fully depleted (FD) silicon-on-thin-BOX (SOTB) and bulk SRAM cells. It is found that butterfly curve shows abnormal “two-mode” distributions, while bit-line and word-line margins maintain good normality even at low VDD, which demonstrates bit-line and word-line margins as preferred write stability metrics.
Keywords :
SRAM chips; silicon-on-insulator; statistical distributions; FD silicon-on-thin-BOX; abnormal two-mode distributions; bit-line margins; bulk SRAM cells; butterfly curve; fully depleted SOTB; low supply voltage; statistical distributions; word-line margins; write stability metrics; Abstracts; Biological system modeling; Noise measurement; Random access memory; Wireless sensor networks;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021370
