Title :
PIC modelling of plasma source ion implantation using metal ion sources
Author :
Faehl, R.J. ; Wood, B.P.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
Abstract :
Summary form only given. Plasma source ion implantation (PSII) is a highly promising technique for improving the surface characteristics of materials. In low pressure gaseous discharges, the PSII process has resulted in enhancements in wear rate and hardness and in the reduction of the coefficient of friction. The use of gas discharges restricts the number of types of ions to which the method can be applied. Greater flexibility will result if metal ion sources can be used to supply the plasma into which the implantation target is immersed. We have modeled metal ion PSII in a variety of configurations with an electromagnetic particle-in-cell (PIC) simulation code.
Keywords :
ion implantation; ion sources; metals; modelling; plasma applications; plasma simulation; PIC modelling; PSII; electromagnetic particle-in-cell simulation code; friction; gas discharges; hardness; low pressure gaseous discharges; metal ion sources; plasma source ion implantation; surface characteristics; wear rate; Fault location; Ion implantation; Ion sources; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Plasma sources; Polarization; Voltage;
Conference_Titel :
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location :
Madison, WI, USA
Print_ISBN :
0-7803-2669-5
DOI :
10.1109/PLASMA.1995.533487
