PIC modelling of plasma source ion implantation using metal ion sources

Author

Faehl, R.J. ; Wood, B.P.

Author_Institution

Los Alamos Nat. Lab., NM, USA

fYear

1995

fDate

5-8 June 1995

Firstpage

264

Abstract

Summary form only given. Plasma source ion implantation (PSII) is a highly promising technique for improving the surface characteristics of materials. In low pressure gaseous discharges, the PSII process has resulted in enhancements in wear rate and hardness and in the reduction of the coefficient of friction. The use of gas discharges restricts the number of types of ions to which the method can be applied. Greater flexibility will result if metal ion sources can be used to supply the plasma into which the implantation target is immersed. We have modeled metal ion PSII in a variety of configurations with an electromagnetic particle-in-cell (PIC) simulation code.

Keywords

ion implantation; ion sources; metals; modelling; plasma applications; plasma simulation; PIC modelling; PSII; electromagnetic particle-in-cell simulation code; friction; gas discharges; hardness; low pressure gaseous discharges; metal ion sources; plasma source ion implantation; surface characteristics; wear rate; Fault location; Ion implantation; Ion sources; Plasma density; Plasma immersion ion implantation; Plasma sheaths; Plasma simulation; Plasma sources; Polarization; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on

Conference_Location

Madison, WI, USA

ISSN

0730-9244

Print_ISBN

0-7803-2669-5

Type

conf

DOI

10.1109/PLASMA.1995.533487

Filename

533487