Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

This paper presents a detailed simulation analysis of the charge loss mechanisms in 3D TANOS cylindrical junction-less charge trapping memory devices. For the programmed state, the role of tunneling through the bottom oxide and top oxide in vertical charge loss were compared, and the latter is found to be the dominant component. It is also found that lateral charge migration shows dependence on the shape of charge trapping layer. And the winding charge trapping layer shows favorable lateral migration performance. Simulation results show that lateral charge migration is more severe rather than vertical charge loss and must be focused with decreasing memory cell size. The result will give an guidance for high density 3D memory design optimization.