DocumentCode :
241914
Title :
Towards full 3D, Zero Variability and Zero power future micro/nano-electronics
Author :
Deleonibus, Simon
Author_Institution :
LETI, Univ. Grenoble Alpes, Grenoble, France
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
In the future, drastic power consumption reduction will request less energy greedy device, interconnect, computing technologies and architectures. Challenging tomorrow´s exponentially growing electronic market, towards Autonomous and Mobile systems for new societal needs, request a drastic reduction towards Zero Intrinsic Variability, Heterogeneous and 3D integration at the device, functional and system levels. Maximizing Energy Efficiency of combined Low Power, High Performance CMOS and Memories to contribute to the energy saving balance at system level, become realistic goals.
Keywords :
CMOS memory circuits; energy conservation; low-power electronics; nanoelectronics; power consumption; random-access storage; three-dimensional integrated circuits; 3D integration; autonomous systems; computing technologies; electronic market; energy efficiency; energy greedy device; energy saving; interconnect; low power CMOS; microelectronics; mobile systems; nanoelectronics; power consumption reduction; zero intrinsic variability; Abstracts; Complexity theory; Lead; Logic gates; Mechanical factors; Silicon; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021383
Filename :
7021383
Link To Document :
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