High performance Ge-pMOSFET integrated on Si platform

Author

Wang, S.K. ; Yang, Xu ; Gong, Z. ; Liang, Robert ; Sun, B. ; Zhao, Wanfang ; Chang, H. ; Wang, Jiacheng ; Liu, H.G.

Author_Institution

Microwave Devices & IC Dept., Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Hetero-integration of high mobility Ge pMOSFET on Si platform is successfully demonstrated in this paper. Fully relaxed high-quality Ge is grown on Si by a two-step epitaxy method. By controlling the high-k/Ge interface passivation technique using ozone treatment, high performance Ge-pMOSFET on Si(100) substrate with a peak mobility of 524 cm²/Vs and an I_on/I_off ratio of >10⁴ is obtained. This work presents a good solution for high-mobility pMOSFETs in future technology node.

Keywords

MOSFET; elemental semiconductors; epitaxial growth; germanium; high-k dielectric thin films; ozonation (materials processing); passivation; silicon; Ge; Si; Si platform; hetero-integration; high mobility Ge pMOSFET; high-k/Ge interface passivation technique; high-mobility pMOSFET; ozone treatment; two-step epitaxy method; Abstracts; Capacitance-voltage characteristics; Epitaxial growth; Logic gates; MOSFET; MOSFET circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021385

Filename

7021385