The effect of in-situ ozone annealing per cycle on Al2O3 gate dielectric deposited by atomic layer deposition using TMA and H2O for InGaAs MOS capacitor

The effect of in-situ ozone annealing per cycle on Al₂O₃ gate dielectric deposited by atomic layer deposition for InGaAs MOS capacitors was demonstrated and studied. An in-situ ozone annealing was performed after each atomic layer deposition cycle of Al₂O₃ deposited using TMA/H₂O as precursors. The electrical characterization of the deposited Al₂O₃ layers has shown that after the in-situ ozone annealing, Al₂O₃ gate dielectric exhibited superior leakage current and density of border trap characteristics, as compared to those grown using TMA/H₂O or TMA/O₃ as precursors.