• DocumentCode
    241925
  • Title

    Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfets

  • Author

    Baili Zhang ; Haijun Lou ; Dan Li ; Xinnan Lin ; Mansun Chan

  • Author_Institution
    Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, a new 2-D analytical potential model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is proposed as the source/drain depletion length taken into account. Then the analytical models for the threshold voltage (Vth), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are also derived from the potential relationship. The model is verified by the numerical simulation and results show good agreement with the simulations.
  • Keywords
    MOSFET; semiconductor device models; 2D analytical potential model; DIBL; JLCSG MOSFET; drain-induced barrier lowering; junctionless cylindrical surrounding-gate MOSFET; short-channel MOSFET; source-drain depletion length; subthreshold slope; threshold voltage; Abstracts; MOSFET; Solid modeling; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021389
  • Filename
    7021389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241925