DocumentCode :
241925
Title :
Analytical model of the subthreshold behavior in short-channel junctionless cylindrical surrounding-gate mosfets
Author :
Baili Zhang ; Haijun Lou ; Dan Li ; Xinnan Lin ; Mansun Chan
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, a new 2-D analytical potential model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is proposed as the source/drain depletion length taken into account. Then the analytical models for the threshold voltage (Vth), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are also derived from the potential relationship. The model is verified by the numerical simulation and results show good agreement with the simulations.
Keywords :
MOSFET; semiconductor device models; 2D analytical potential model; DIBL; JLCSG MOSFET; drain-induced barrier lowering; junctionless cylindrical surrounding-gate MOSFET; short-channel MOSFET; source-drain depletion length; subthreshold slope; threshold voltage; Abstracts; MOSFET; Solid modeling; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021389
Filename :
7021389
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=241925
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