DocumentCode
241931
Title
Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor
Author
Wei-Chao Zhou ; Xi Lin ; Xiao-Yong Liu ; Xiang-Ming Xu ; Chun-Min Zhang ; Jin-Shan Shi ; Peng-Fei Wang ; Zhang, David Wei
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.
Keywords
field effect transistors; semiconductor doping; thermal diffusion; tunnelling; TFET; ambipolar characteristics; drain doping concentration; high on-current tunneling field effect transistor fabrication; rapid thermal diffusion; spin-on-dopant investigation; surface doping concentration; Boron; Doping; Films; MOS devices; Phosphors; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021392
Filename
7021392
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