DocumentCode :
241940
Title :
A numerical analysis on the thermal effect in GaN based Gunn diode
Author :
Yong-Hong Huang ; Ying Wang ; Lin-An Yang ; Hui-Fang Zhai ; Zhi-Zhe Wang ; Yue Hao
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xian, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
We present a numerical analysis on the electric and thermal behaviors of GaN n+n-nn+ Gunn oscillations based on Energy Balance (EB) model and Non-isothermal Energy Balance (NEB) models. We can achieve the influence of lattice heating on the Gunn oscillations based on NEB model, as it is based on the coupling of an energy-balance model with a thermal model for the description of the lattice temperature everywhere in the device, which makes it possible to optimize the device.
Keywords :
Gunn diodes; III-V semiconductors; gallium compounds; numerical analysis; wide band gap semiconductors; GaN; Gunn diode; Gunn oscillations; NEB model; electric behaviors; lattice heating; lattice temperature; non-isothermal energy balance models; numerical analysis; thermal behaviors; thermal effect; Abstracts; Cathodes; Educational institutions; Lattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021397
Filename :
7021397
Link To Document :
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