Title :
High performance AlGaN/GaN power diode with edge-terminated hybrid anode
Author :
Qi Zhou ; Ling Wang ; Xu Bao ; Jinyu Mou ; Yuanyuan Shi ; Zhaoyang Liu ; Wanjun Chen ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this work, an AlGaN/GaN power diode with edge-terminated Schottky/ohmic hybrid (ETH) anode is proposed. 2-D simulation is carried out to study the characteristics of the ETH-diode. The forward onset voltage Von of the device can be modulated by thinning the barrier thickness beneath the Schottky gate region of the hybrid anode. With remaining AlGaN-barrier of 5 nm the Von as low as 0.25 V is achieved in ETH-Diode. Comparing with the reference device the edge-termination (ET) integrated into the ETH-Diode enabling more than 5-order and 2-order leakage current reduction at -100 V and -300 V, respectively. Correspondingly, even using a more stringent criterion the breakdown voltage (BV) is improved from 400 V at Ileakage=10 μA/mm to 510 V at Ileakage=1 μA/mm in a device with anode-cathode spacing of 5 μm due to the employment of the edge-termination. By using a 2 μm field plate the BV of the ETH-Diode can be further improved to 800 V.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; aluminium compounds; gallium compounds; leakage currents; power semiconductor diodes; wide band gap semiconductors; AlGaN-GaN; ETH anode; ETH-diode; Schottky gate region; breakdown voltage; edge-terminated Schottky/ohmic hybrid anode; edge-terminated hybrid anode; leakage current; power diode; size 2 mum; size 5 mum; size 5 nm; voltage 400 V; voltage 510 V; voltage 800 V; Abstracts; Gallium nitride; Logic gates; Substrates; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021399
