Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values

Author

Arnold, E. ; Golio, M. ; Miller, M. ; Beckwith, B.

Author_Institution

Motorola Inc., Chandler, AZ, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

359

Abstract

A simple method is described for extracting the intrinsic element and parasitic inductance values for the GaAs MESFET equivalent circuit. The intrinsic element values are extracted from low-frequency y-parameter data deembedded through previously determined parasitic resistances. Parasitic inductance values are then evaluated by comparing the resulting modeled z-parameters with the extrinsic measured z-parameters. All elements are extracted from the same set of hot FET S-parameter measurements. The method is very fast, and the resulting equivalent circuit provides an excellent match to measured S-parameters through 18 GHz.<>

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; solid-state microwave devices; 18 GHz; GaAs; III-V semiconductors; MESFET; equivalent circuit; hot FET S-parameter measurements; intrinsic element; low-frequency y-parameter data; parasitic inductance values; z-parameters; Data mining; Electrical resistance measurement; Equivalent circuits; FETs; Gallium arsenide; Inductance; MESFETs; MMICs; Radio frequency; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99594

Filename

99594