Title :
Memristor-based programmable delay element
Author :
Xiao Zhang ; Zhuo Ma ; Jinshan Yu ; Lunguo Xie
Author_Institution :
Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
Memristor has a great deal of application researches recently because of its nanotechnology, rapid conversion, resistance-memoring, compatibility with CMOS technology. This paper proposes a CMOS delay element based on memristor resistance-memoring and threshold voltage. The unit can be programmed precisely. Simulation results show that the delay can get perfect monotonicity and controllability.
Keywords :
CMOS integrated circuits; delay circuits; memristors; nanotechnology; programmable circuits; CMOS delay element technology; controllability; memristor-based programmable delay element; monotonicity; nanotechnology; rapid conversion; resistance-memoring; threshold voltage; Abstracts; Arrays; Capacitance; Delays; Educational institutions; Vectors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021414
