• DocumentCode
    241976
  • Title

    Memristor-based programmable delay element

  • Author

    Xiao Zhang ; Zhuo Ma ; Jinshan Yu ; Lunguo Xie

  • Author_Institution
    Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Memristor has a great deal of application researches recently because of its nanotechnology, rapid conversion, resistance-memoring, compatibility with CMOS technology. This paper proposes a CMOS delay element based on memristor resistance-memoring and threshold voltage. The unit can be programmed precisely. Simulation results show that the delay can get perfect monotonicity and controllability.
  • Keywords
    CMOS integrated circuits; delay circuits; memristors; nanotechnology; programmable circuits; CMOS delay element technology; controllability; memristor-based programmable delay element; monotonicity; nanotechnology; rapid conversion; resistance-memoring; threshold voltage; Abstracts; Arrays; Capacitance; Delays; Educational institutions; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021414
  • Filename
    7021414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241976