3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

Thermal and electrical transport in FinFET with statistical variations is investigated by 3D coupled electro-thermal simulation, using statistical-variability-aware device simulator GARAND with built-in thermal simulation module. The module employs a new formula for the calculation of the thermal conductivity in the fin region with fin shape dependence. An SOI FinFET structure with combined statistical sources of GER, FER and MGG is studied, with a focus on the lattice temperature profile and the statistical distribution of on current.