Title :
Preparation and properties of epoxy-organically modified layered silicate nanocomposites
Author :
Imai, Takahiro ; Hirano, Yoshihiko ; Hirai, Hisayuki ; Kojima, Susumu ; Shimizu, Toshio
Author_Institution :
Chem. & Electr. Insulation Technol. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
Epoxy-silicate nanocomposites were prepared by dispersing synthetic layered silicates modified with alkylammonium ions. In the dispersing process, the organically modified layered silicates were mixed in epoxy resin with shearing, and aggregations of the silicates were removed by centrifugal separation after mixing epoxy resin and silicates. Micrographs taken by transmission electron microscopy (TEM) indicate that the nanocomposites have a mixed morphology including both parallel silicate layers (0.1-0.5 μm, 5-15 layers) and exfoliated silicate layers (nano-scale dispersion) area. In terms of thermal resistance properties, the glass transition temperature (Tg) of the nanocomposite was shifted to a higher temperature (Δ20°C) than pure epoxy. Furthermore, dispersion of modified silicate prevented relative permittivity (εr) and dielectric loss (tanδ) from increasing at a high temperature above the glass transition temperature.
Keywords :
composite insulating materials; dielectric loss measurement; epoxy insulation; glass transition; insulation testing; nanostructured materials; permittivity measurement; transmission electron microscopy; 0.1 to 0.5 micron; TEM; aggregations; alkyl-ammonium ions; centrifugal separation; dielectric loss; epoxy resin; epoxy-silicate nanocomposites; glass transition temperature; micrographs; mixed morphology; nanocomposites; parallel silicate layers; relative permittivity; shearing; synthetic layered silicates dispersion; thermal resistance properties; transmission electron microscopy; Dielectric losses; Epoxy resins; Glass; Morphology; Nanocomposites; Permittivity; Shearing; Temperature; Thermal resistance; Transmission electron microscopy;
Conference_Titel :
Electrical Insulation, 2002. Conference Record of the 2002 IEEE International Symposium on
Print_ISBN :
0-7803-7337-5
DOI :
10.1109/ELINSL.2002.995955