DocumentCode :
242007
Title :
Challenges at circuit designs for resistive-type Nonvolatile memory and nonvolatile logics in mobile and cloud applications
Author :
Meng-Fan Chang ; Lee, Albert ; Chia-Chen Kuo ; Shyh-Shyuan Sheu ; Chen, F.T. ; Tzu-Kun Ku ; Yong-Pan Liu ; Hua-Zhong Yang ; Ping-Cheng Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
4
Abstract :
To reach long operating time, Nonvolatile memory (NVM) has been applied to mobile systems in an attempt to reduce energy consumption through normally-off operation. The ReRAM device as a nonvolatile memory has shown promises in replacing current NVMs used in these applications, with orders of improvement in write speeds and read/write power than those offered by conventional Flash memories. Unfortunately, constraints related to endurance, read disturb, and resistance variations are still to be overcome for the wide usage of this device. This paper provides a review of the challenges and trends associated with the ReRAM circuits and applications used in mobile and cloud applications.
Keywords :
logic design; resistive RAM; NVM; ReRAM device; cloud applications; energy consumption; mobile applications; mobile systems; nonvolatile logics; read disturb; resistance variations; resistive-type nonvolatile memory; Abstracts; Computer architecture; Ferroelectric films; Nonvolatile memory; Random access memory; Reliability; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021430
Filename :
7021430
Link To Document :
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