Investigation on TID tolerance of 65nm bulk silicon nMOSFETs

The radiation response of 65nm bulk silicon NMOSFETs is investigated,such as core devices and I/O devices. The results indicate that radiation induced threshold voltage (V_T) shift is not evident for both types of devices. The degradation of the off-state leakage current of core devices is not significant, which illustrates weak dependence on device geometry. However, the off-state leakage current degradation of I/O transistors is relatively obvious which may have an impact on the static power consumption of integrated circuit. The results indicate that I/O devices may be paid more attention for radiation-hardened design.