DSOI FET - A novel TID tolerant SOI transistor

Charge trapping in the buried oxide can lead to serious back-channel leakage and make SOI (Silicon-on-Insulator) transistors more sensitive to total dose radiation. In this paper, a new DSOI (Double SOI) transistor is proposed, which utilizes the method of back-gate biasing to force an external electric field, and then depress the back channel formation during total dose irradiation. The simulation and testing results both indicate that, for a given structure, when a -3V bias is applied to the back-gate, the DSOI transistor can tolerant a total dose radiation of 500k rad(Si). This methodology fits all kinds of SOI MOSFETs, especially for the Fully-Depletion SOI transistors. With commercial (not especially hardened) buried oxide, DSOI device can have better radiation hardening performance than its both companions - FDSOI and PDSOI transistors.