Title :
Self-heating and reliability issues in FinFET and 3D ICs
Author :
Khan, Muhammad Imran ; Buzdar, Abdul Rehman ; Fujiang Lin
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China (USTC), Hefei, China
Abstract :
This paper discusses self-heating and reliability issues in FinFET and 3D ICs. In FinFET, self-heating and reliability issues are more serious as compared to other planar transistors. Self-heating issues in conventional planar transistors are controlled by moving the generated heat away down into the bulk of the device. However in FinFET, self-heating is a serious issue because of complex geometry and there is nowhere for the heat to go. Self-heating of FinFET causes many problems like increase in temperature of the metal wires which results in enhancing the electromigration effect. FinFET self-heating model and the design considerations to minimize the power dissipation in FinFET and 3D ICs are presented in this paper.
Keywords :
MOSFET; electromigration; integrated circuit reliability; semiconductor device reliability; thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; 3D integrated circuit; FinFET; electromigration effect; metal wire temperature; power dissipation; reliability issues; self-heating issues; self-heating model; Heating; MOSFET; Materials; Rockets; Silicides; Thermal resistance; Three-dimensional displays; 3D ICs; FinFET; Modeling; Reliability; Self-heating; Transistor;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021443
