A monolithic high power Ka-band PIN switch

Author

Bellantoni, J.V. ; Bartle, D.C. ; Payne, D. ; McDermott, G. ; Bandla, S. ; Tayrani, R. ; Raffaelli, L.

Author_Institution

Gamma Monolithics, Woburn, MA, USA

fYear

1989

fDate

12-13 June 1989

Firstpage

47

Lastpage

50

Abstract

A high-power Ka-band single-pole double-throw (SPDT) switch using monolithic GaAs epitaxial p-i-n diode technology is presented. The switch uses epitaxial vertical p-i-n diode structures in a shunt configuration optimized for low loss and high isolation under high power signal conditions. The vertical epitaxial structure provides lower RF impedance under forward bias and superior power handling capability. An additional feature of the circuit is the location of the p-i-n diode directly underneath the RF line, which improves isolation and increases bandwidth. Insertion loss is 0.7 dB at 35 GHz, and isolation is better than 32 dB from 30 to 40 GHz. The power-handling capability is at least +38 dBm pulsed and +35 dBm CW. Switching speed rise and fall times are 2 ns.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; p-i-n diodes; semiconductor switches; 0.7 dB; 2 ns; 30 to 40 GHz; 32 dB; EHF; GaAs; Ka-band PIN switch; MMIC; RF impedance; SPDT; bandwidth; epitaxial p-i-n diode technology; fall times; forward bias; high isolation; high power signal conditions; high-power; low loss; power handling capability; rise-times; semiconductors; shunt configuration; single-pole double-throw; switching speed; vertical epitaxial structure; vertical p-i-n diode structures; Circuit analysis computing; Diodes; Filters; Impedance; Insertion loss; Millimeter wave radar; Prototypes; Radio frequency; Switches; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1989. Digest of Papers., IEEE 1989

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MCS.1989.37260

Filename

37260