DocumentCode :
24210
Title :
A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS
Author :
Kull, Lukas ; Toifl, Thomas ; Schmatz, Martin ; Francese, Pier Andrea ; Menolfi, Christian ; Brandli, Matthias ; Kossel, Marcel ; Morf, Thomas ; Andersen, Toke Meyer ; Leblebici, Yusuf
Author_Institution :
IBM Res. - Zurich, Rüschlikon, Switzerland
Volume :
48
Issue :
12
fYear :
2013
fDate :
Dec. 2013
Firstpage :
3049
Lastpage :
3058
Abstract :
An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alternate comparators clocked asynchronously and a redundant capacitive DAC with constant common mode to improve the accuracy of the comparator. A low-power, clocked capacitive reference buffer is used, and fractional reference voltages are provided to reduce the number of unit capacitors in the capacitive DAC (CDAC). The ADC stacks the CDAC with the reference capacitor to reduce the area and enhance the settling speed. Background calibration of comparator offset is implemented. The ADC consumes 3.1 mW from a 1 V supply and occupies 0.0015 mm2.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; comparators (circuits); digital-analogue conversion; elemental semiconductors; silicon-on-insulator; CDAC; background calibration; capacitive DAC; comparator accuracy; comparator offset; digital SOI CMOS; figure-of-merit; high-speed operation; low-power clocked capacitive reference buffer; power 3.1 mW; redundant capacitive DAC; reference capacitor; single-channel asynchronous SAR ADC; single-channel successive approximation register ADC; size 32 nm; speed enhancement; voltage 1 V; Calibration; Capacitors; Clocks; Noise; Redundancy; Resistance; Switches; ADC; SAR; alternate comparators; analog-to-digital converter; asynchronous; constant common mode; offset compensation; redundant; successive approximation;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2279571
Filename :
6607254
Link To Document :
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